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| SOS type pressure transmitter |
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| Introduction of SOS type pressure sensor |
The Silicon On Sapphire technology is that the silicon thin film was formed on sapphire (Al2O3 single crystal) substrate (epitaxial growth).The silicon semiconductor type strain gage that uses thin silicon film composes the physical, electric, extremely stable ideal sensor that the electrical resistance line unites with the sapphire substrate in the atm. This sensor (NS800 series) is adopted 56 pieces per one HIIA rocket. |
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High-accuracy, negative / absolute pressure use NS100A series |
Accuracy 0.2 %R.O., Possible to measure the compound pressure and absolute pressure accurately.
Comformed to CE standard (only for voltage output)
Rated capacity : 200 kPa~50 MPa |
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Intrinsically safe explosion proof type NS104 series |
Accuracy0.5%R.O. including the zener barrier, Approved
Ex ia IIC T4 for intrinsical safe explosion-proof (Technical standard). Accuracy 0.2%R.O. can be available after the optional adjustment.
Rated capacity : 100 kPa~50 MPa |
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Mel pressure transmitter NS403B / NS413B series |
Total aAccuracy : ±2.0 %R.O., No mercury and no push rod. High-accuracy and excellent temperature characteristics. Introduction of SOS type melt pressure transmitter.
Rated capacity : 20 MPa, 35 MPa, 50 MPa |
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High-accuracy with long term stability NS115P / NS115 series |
Accuracy 0.1%R.O., Excellent in a long term stability, solidity and a surge pressure measurement. Zero point adjustment is available.
Rated capacity : 500 kPa~10 MPa(NS115P / High-accuracy type),
5 MPa~50 MPa (NS115 / Standard type) |
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| Strain Gage type pressure transmitter |
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High endurance type PRN01 / PRN02 series |
Total aAccuracy : ±1.0 %F.S., ASIC amplifier is mounted, High performance type with excellent feature in temperature effect and a noise.
Rated capacity : 5 MPa~100 MPa |
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| SOS type pressure transducer |
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| Strain Gage type pressure transducer |
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